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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US RE49954 B1

PDFFull Text
Date of Patent:
Apr. 30, 2024

Filed:

Jun. 03, 2021

Fabrication of nano-sheet transistors with different threshold voltages

Applicant:

Tessera Llc, San Jose, CA (US);

Inventors:

Karthik Balakrishnan, White Plains, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Pouya Hashemi, White Plains, NY (US);

Alexander Reznicek, Troy, NY (US);

Assignee:

TESSERA LLC, San Jose, CA (US);

Attorney:

HALEY GUILIANO LLP

Primary Examiner:

Tuan H Nguyen

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 27/088 (2013.01); H01L 21/02603 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/84 (2013.01); H01L 21/845 (2013.01); H01L 29/0665 (2013.01); H01L 29/401 (2013.01); H01L 29/42376 (2013.01); H01L 29/42392 (2013.01); H01L 29/4983 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/775 (2013.01); H01L 29/78651 (2013.01); H01L 29/78696 (2013.01);
Abstract

A method of forming two or more nano-sheet devices with varying electrical gate lengths, including, forming at least two cut-stacks including a plurality of sacrificial release layers and at least one alternating nano-sheet channel layer on a substrate, removing a portion of the plurality of sacrificial release layers to form indentations having an indentation depth in the plurality of sacrificial release layers, and removing a portion of the at least one alternating nano-sheet channel layer to form a recess having a recess depth in the at least one alternating nano-sheet channel layers, where the recess depth is greater than the indentation depth.

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