The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2018
Filed:
Jan. 10, 2016
Toshiba Memory Corporation, Minato-ku, JP;
Ryota Katsumata, Mie, JP;
Hideaki Aochi, Kanagawa, JP;
Hiroyasu Tanaka, Mie, JP;
Masaru Kito, Kanagawa, JP;
Yoshiaki Fukuzumi, Kanagawa, JP;
Masaru Kidoh, Mie, JP;
Yosuke Komori, Mie, JP;
Megumi Ishiduki, Mie, JP;
Junya Matsunami, Kanagawa, JP;
Tomoko Fujiwara, Kanagawa, JP;
Ryouhei Kirisawa, Kanagawa, JP;
Yoshimasa Mikajiri, Mie, JP;
Shigeto Oota, Mie, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and a drive circuit. The stacked body is provided on the substrate. The stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films. A through-hole is made in the stacked body to align in a stacking direction. The semiconductor pillar is buried in an interior of the through-hole. The charge storage film is provided between the electrode film and the semiconductor pillar. The drive circuit supplies a potential to the electrode film. The diameter of the through-hole differs by a position in the stacking direction. The drive circuit supplies a potential to reduce a potential difference with the semiconductor pillar as a diameter of the through-hole piercing the electrode film decreases.