The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2013
Filed:
Oct. 10, 2011
Masahiro Yamamoto, Sagamihara, JP;
Hidetoshi Fujimoto, Kawasaki, JP;
Yoshihiro Kokubun, Yokohama, JP;
Masayuki Ishikawa, Yokohama, JP;
Shinji Saito, Yokohama, JP;
Yukie Nishikawa, Narashino, JP;
John Rennie, Tokyo, JP;
Masahiro Yamamoto, Sagamihara, JP;
Hidetoshi Fujimoto, Kawasaki, JP;
Yoshihiro Kokubun, Yokohama, JP;
Masayuki Ishikawa, Yokohama, JP;
Shinji Saito, Yokohama, JP;
Yukie Nishikawa, Narashino, JP;
John Rennie, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki-shi, JP;
Abstract
The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric deviceaccording to the present invention is constructed by depositing compound-semiconductor layersandon a monocrystalline substrateof a hexagonal close-packed structure. The shape of the monocrystalline substrateis a parallelogram. Individual sides of the parallelogram are parallel to a <11-20> orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layerand p-type GaN layermay be used.