The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2010
Filed:
Sep. 25, 2005
Chia-tung Ho, Taipei, TW;
Feng-jia Shih, Hsin-Chu, TW;
Jieh-jang Chen, Hsin-Chu, TW;
Ching-sen Kuo, Taipei, TW;
Shih-chi Fu, Taipei, TW;
Gwo-yuh Shiau, Hsin-Chu, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Chia-Tung Ho, Taipei, TW;
Feng-Jia Shih, Hsin-Chu, TW;
Jieh-Jang Chen, Hsin-Chu, TW;
Ching-Sen Kuo, Taipei, TW;
Shih-Chi Fu, Taipei, TW;
Gwo-Yuh Shiau, Hsin-Chu, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method of forming a planarized photoresist coating on a substrate having holes with different duty ratios is described. A first photoresist preferably comprised of a Novolac resin and a diazonaphthoquinone photoactive compound is coated on a substrate and baked at or slightly above its Tg so that it reflows and fills the holes. The photoresist is exposed without a mask at a dose that allows the developer to thin the photoresist to a recessed depth within the holes. After the photoresist is hardened with a 250° C. bake, a second photoresist is coated on the substrate to form a planarized film with a thickness variation of less than 50 Angstroms between low and high duty ratio hole regions. One application is where the second photoresist is used to form a trench pattern in a via first dual damascene method. Secondly, the method is useful in fabricating MIM capacitors.