The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Jan. 17, 2017
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Bruce B. Doris, Slingerlands, NY (US);
Ali Khakifirooz, Los Altos, CA (US);
Darsen D. Lu, Mount Kisco, NY (US);
Alexander Reznicek, Troy, NY (US);
Kern Rim, San Diego, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor structure that includes a tensily strained silicon fin extending upwards from a first portion of a substrate and in an nFET device region, and a SiGe fin structure extending upwards from a second portion of the substrate and in a pFET device region. In accordance with the present application, the SiGe fin structure comprises, from bottom to top, a lower SiGe fin that is relaxed and an upper SiGe fin, wherein the upper SiGe fin is compressively strained and has a germanium content that is greater than a germanium content of the lower SiGe fin.