The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2018

Filed:

Feb. 11, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yana Cheng, San Jose, CA (US);

Yong Cao, San Jose, CA (US);

Srinivas Guggilla, San Jose, CA (US);

Sree Rangasai Kesapragada, Milpitas, CA (US);

Xianmin Tang, San Jose, CA (US);

Deenesh Padhi, Sunnyvale, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/76802 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 23/5329 (2013.01); H01L 23/53223 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01);
Abstract

Interconnect structures and methods of formation of such interconnect structures are provided herein. In some embodiments, a method of forming an interconnect includes: depositing a silicon-aluminum oxynitride (SiAlON) layer atop a first layer of a substrate, wherein the first layer comprises a first feature filled with a first conductive material; depositing a dielectric layer over the silicon-aluminum oxynitride (SiAlON) layer; and forming a second feature in the dielectric layer and the silicon-aluminum oxynitride (SiAlON) layer to expose the first conductive material.


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