The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Jun. 01, 2017
Applicant:

Stats Chippac Pte. Ltd., Singapore, SG;

Inventors:

Pandi C. Marimuthu, Singapore, SG;

Il Kwon Shim, Singapore, SG;

Yaojian Lin, Jiangyin, CN;

Won Kyoung Choi, Singapore, SG;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2006.01); H01L 21/56 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 23/49833 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H01L 25/0657 (2013.01); H01L 21/568 (2013.01); H01L 23/5389 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/94 (2013.01); H01L 2224/03 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1134 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11901 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81192 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18162 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A semiconductor device includes a semiconductor die. A first interconnect structure is disposed over a peripheral region of the semiconductor die. A semiconductor component is disposed over the semiconductor die. The semiconductor component includes a second interconnect structure. The semiconductor component is disposed over the semiconductor die to align the second interconnect structure with the first interconnect structure. The first interconnect structure includes a plurality of interconnection units disposed around first and second adjacent sides of the semiconductor die to form an L-shape border of the interconnection units around the semiconductor die. A third interconnect structure is formed over the semiconductor die perpendicular to the first interconnect structure. An insulating layer is formed over the semiconductor die and first interconnect structure. A plurality of vias is formed through the insulating layer and into the first interconnect structure with the second interconnect structure disposed within the vias.


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