The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Feb. 27, 2012
Applicants:

Tsung-shu Lin, New Taipei, TW;

Han-ping Pu, Taichung, TW;

Ming-da Cheng, Jhubei, TW;

Chang-chia Huang, Hsinchu, TW;

Hao-juin Liu, Kaohsiung, TW;

Inventors:

Tsung-Shu Lin, New Taipei, TW;

Han-Ping Pu, Taichung, TW;

Ming-Da Cheng, Jhubei, TW;

Chang-Chia Huang, Hsinchu, TW;

Hao-Juin Liu, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 23/293 (2013.01); H01L 21/568 (2013.01); H01L 23/3157 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 24/04 (2013.01); H01L 24/06 (2013.01); H01L 24/10 (2013.01); H01L 24/11 (2013.01); H01L 24/12 (2013.01); H01L 24/14 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/10126 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/1181 (2013.01); H01L 2224/1191 (2013.01); H01L 2224/13005 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81411 (2013.01); H01L 2224/81413 (2013.01); H01L 2224/81416 (2013.01); H01L 2224/81439 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/81455 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract

The mechanisms of forming a copper post structures described enable formation of copper post structures on a flat conductive surface. In addition, the copper post structures are supported by a molding layer with a Young's modulus (or a harder material) higher than polyimide. The copper post structures formed greatly reduce the risk of cracking of passivation layer and delamination of at the dielectric interface surrounding the copper post structures.


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