The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2018
Filed:
Mar. 21, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/68 (2006.01); H01L 21/683 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); H01L 21/67092 (2013.01); H01L 21/67109 (2013.01); H01L 21/6836 (2013.01); H01L 22/26 (2013.01); H01L 22/12 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 25/0652 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/13 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81192 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/3511 (2013.01);
Abstract
A method of wafer bonding includes bonding a wafer to a carrier in a bonding system. The method further includes measuring thickness profile of the bonded wafer. The method further includes modifying surface contours of at least one of an upper plate or a lower plate of the bonding system during a bonding operation to improve planarity of bonded wafers based on the measured thickness profile, wherein modifying the surface contours of at least one of the upper plate or the lower plate comprises modifying the surface contours using a plurality of height adjusters.