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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9978597 B1

PDFFull Text
Date of Patent:
May. 22, 2018

Filed:

Jun. 06, 2014

Method for treating the surface of a silicon-carbide substrate including a removal step in which a modified layer produced by polishing is removed by heating under si vapor pressure

Applicant:

Kwansei Gakuin Educational Foundation, Nishinomiya-shi, Hyogo, JP;

Inventors:

Tadaaki Kaneko, Sanda, JP;

Noboru Ohtani, Sanda, JP;

Kenta Hagiwara, Sanda, JP;

Assignee:

KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Nishinomiya-shi, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Duy T Nguyen

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/04 (2006.01); C30B 29/36 (2006.01); C30B 33/00 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/302 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0475 (2013.01); C30B 29/36 (2013.01); C30B 33/00 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/302 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/30625 (2013.01); H01L 21/67069 (2013.01); H01L 21/67109 (2013.01); H01L 21/67115 (2013.01); H01L 21/68792 (2013.01);
Abstract

This method for treating a surface of a SiC substrate includes a first removal step in which a modified layer produced by subjecting the substrate () to mechanical polishing or chemical-mechanical polishing is removed by heating the substrate () under Si vapor pressure. A second removal step in which macro-step bunching occurred in an epitaxial layer () is removed by heating the substrate () under Si vapor pressure may also be performed. Since the etching rate can be varied, etching rate in the first removal step is high, so that the modified layer can be removed in a short time. Meanwhile, etching rate in the second removal step is comparatively low, so that excessive removal of the epitaxial layer () can be prevented.

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