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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9978594 B1

PDFFull Text
Date of Patent:
May. 22, 2018

Filed:

Nov. 15, 2016

Formation method of semiconductor device structure using patterning stacks

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Li-Yen Lin, Wujie Township, Yilan County, CN;

Ching-Yu Chang, Yuanshan Township, Yilan County, TW;

Kuei-Shun Chen, Hsinchu, TW;

Chin-Hsiang Lin, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Kyoung Lee

Assistant Examiner:

Christina Sylvia

Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/311 (2006.01); G03F 7/09 (2006.01); G03F 7/004 (2006.01); G03F 7/16 (2006.01); G03F 7/038 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); G03F 7/0045 (2013.01); G03F 7/038 (2013.01); G03F 7/0382 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2002 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01); H01L 21/31133 (2013.01); H01L 21/31144 (2013.01);
Abstract

Formation methods of a semiconductor device structure are provided. The method includes forming an under layer over a substrate, forming a middle layer over the under layer, and forming a patterned upper layer over the middle layer. The patterned upper layer has a first opening exposing a portion of the middle layer. The method also includes etching the portion of the middle layer exposed by the first opening to form a second opening exposing a portion of the under layer, and etching the portion of the under layer exposed by the second opening of the middle layer. The method further includes forming pores in the middle layer before or during the etching of the portion of the under layer.

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