The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2018

Filed:

Apr. 26, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Fu-Chun Huang, Hsinchu County, TW;

Li-Chen Yen, Hsinchu County, TW;

Tzu-Heng Wu, New Taipei, TW;

Yi-Heng Tsai, Hsinchu, TW;

Chun-Ren Cheng, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0086 (2013.01); B81C 1/00246 (2013.01); B81B 2207/015 (2013.01); B81B 2207/07 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0181 (2013.01); B81C 2203/035 (2013.01);
Abstract

A method of manufacturing a semiconductor structure includes receiving a first substrate including a dielectric layer disposed over the first substrate; forming a sensing structure and a bonding structure over the dielectric layer; disposing a conductive layer on the sensing structure; disposing a barrier layer over the dielectric layer; removing a first portion of the barrier layer to at least partially expose the conductive layer on the sensing structure; and removing a second portion of the barrier layer to at least partially expose the bonding structure.


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