The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2018

Filed:

Jun. 23, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kohei Fukushima, Oshu, JP;

Hiroyuki Matsuura, Oshu, JP;

Yutaka Motoyama, Oshu, JP;

Koichi Shimada, Oshu, JP;

Takeshi Ando, Oshu, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/507 (2006.01); H01L 21/02 (2006.01); H05H 1/46 (2006.01); C23C 16/452 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/507 (2013.01); C23C 16/452 (2013.01); H01J 37/321 (2013.01); H01J 37/32357 (2013.01); H01J 37/32779 (2013.01);
Abstract

A substrate processing apparatus includes: a processing vessel configured to be vacuumed; a holding unit configured to hold a plurality of substrates and to be inserted into or separated from the processing vessel; a gas supply unit configured to supply gas into the processing vessel; a plasma generation box partitioned and formed by a plasma partition wall; an inductively coupled electrode located at an outer sidewall of the plasma generation box along its length direction; a high frequency power supply connected to the inductively coupled electrode through a feed line; and a ground electrode located outside the plasma generation box and between the processing vessel and the inductively coupled electrode and arranged in the vicinity of the outer sidewall of the plasma generation box or at least partially in contact with the outer sidewall.


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