The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Jul. 05, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Philipp Jaschinsky, Dresden, DE;

Frank Kahlenberg, Dresden, DE;

Sirko Kramp, Langebrück, DE;

Roberto Schiwon, Dresden, DE;

Rolf Seltmann, Radebeul, DE;

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G06F 17/50 (2006.01); G06F 19/00 (2018.01); H01L 21/66 (2006.01); H01L 21/302 (2006.01); G01B 11/14 (2006.01); G06F 17/30 (2006.01); G05B 19/042 (2006.01); G05B 17/02 (2006.01); G03F 1/70 (2012.01); H01L 21/027 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); G03F 1/70 (2013.01); G03F 7/20 (2013.01); G05B 17/02 (2013.01); G05B 19/0426 (2013.01); G06F 17/30424 (2013.01); H01L 21/0274 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01);
Abstract

Disclosed are methods of advanced process control (APC) for particular processes. A particular process (e.g., a photolithography or etch process) is performed on a wafer to create a pattern of features. A parameter is measured on a target feature and the value of the parameter is used for APC. However, instead of performing APC based directly on the actual parameter value, APC is performed based on an adjusted parameter value. Specifically, an offset amount (which is previously determined based on an average of a distribution of parameter values across all of the features) is applied to the actual parameter value to acquire an adjusted parameter value, which better represents the majority of features in the pattern. Performing this APC method minimizes dimension variations from pattern to pattern each time the same pattern is generated on another region of the same wafer or on a different wafer using the particular process.


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