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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9966299 B1

PDFFull Text
Date of Patent:
May. 08, 2018

Filed:

Jul. 19, 2016

Inhibitor plasma mediated atomic layer deposition for seamless feature fill

Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Wei Tang, Fremont, CA (US);

Bart Van Schravendijk, Sunnyvale, CA (US);

Jun Qian, Fremont, CA (US);

Hu Kang, Tualatin, OR (US);

Adrien LaVoie, Portland, OR (US);

Deenesh Padhi, Sunnyvale, CA (US);

David C. Smith, Lake Oswego, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:

Moazzam Hossain

Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); C23C 16/458 (2006.01); C23C 16/50 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/40 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); C23C 16/02 (2013.01); C23C 16/045 (2013.01); C23C 16/402 (2013.01); C23C 16/458 (2013.01); C23C 16/4554 (2013.01); C23C 16/45527 (2013.01); C23C 16/45534 (2013.01); C23C 16/45544 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/02315 (2013.01); H01L 21/32051 (2013.01); H01L 21/76837 (2013.01);
Abstract

Systems and methods for depositing film in a substrate processing system includes performing a first atomic layer deposition (ALD) cycle in a processing chamber to deposit film on a substrate including a feature; after the first ALD cycle, exposing the substrate to an inhibitor plasma in the processing chamber for a predetermined period to create a varying passivated surface in the feature; and after the predetermined period, performing a second ALD cycle in the processing chamber to deposit film on the substrate.

Published as:
US2015243545A1; KR20150101431A; CN104928654A; TW201546324A; US9425078B2; US2016329238A1; US9966299B2; CN104928654B; CN110129764A; TWI684671B; CN110129764B; KR102459788B1; KR20220149487A; KR102594209B1;

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