The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Aug. 16, 2017
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian province, CN;
Chien-Ting Ho, Taichung, TW;
Li-Wei Feng, Kaohsiung, TW;
Ying-Chiao Wang, Changhua County, TW;
Yu-Chieh Lin, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian province, CN;
Abstract
A method for forming a semiconductor device includes providing a substrate having a plurality of memory cells formed therein; forming an insulating layer on the substrate; forming a plurality of openings in the insulating layer and exposing a portion of the memory cells; forming a conductive portion and a metal layer in the openings; removing a portion of the metal layer to form a plurality of first metal portions and a plurality of second metal portions that the first metal portion and the conductive portion form a first connecting structure, and the second metal portion and the conductive portion form a second connecting structure; forming a passivation layer on the first connecting structures; and forming a plurality of first storage nodes and dummy nodes on the substrate and the first storage nodes and the dummy nodes are electrically connected to the second connecting structures and the first connecting structures respectively.