The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Nov. 25, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chun-Li Lin, Hsin-Chu, TW;
Yi-Fang Li, Hemei Township, TW;
Geng-Shuoh Chang, Taipei, TW;
Chun-Sheng Wu, Hsin-Chu, TW;
Po-Hsiung Leu, Lujhu Township, TW;
Ding-I Liu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes a patterned hard mask layer formed over a substrate. The substrate is etched using the patterned hard mask layer to form a trench therein but leaving at least one elongated portion of the substrate inside the trench. A first isolation layer is formed over the patterned hard mask layer. The first isolation layer fills the trench and covers the at least one elongated portion of the substrate. A portion of the first isolation layer is removed to expose the at least one elongated portion of the substrate. The at least one elongated portion of the substrate is thereafter removed to form a first opening. A second isolation layer is formed over the first opening, the patterned hard mask layer, and the first isolation layer, the second isolation layer sealing the first opening to form an air gap.