The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Feb. 09, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Victor Chiang Liang, Hsinchu, TW;
Fu-Huan Tsai, Kaohsiung, TW;
Fang-Ting Kuo, Zhubei, TW;
Meng-Chang Ho, Hsinchu, TW;
Yu-Lin Wei, Taichung, TW;
Chi-Feng Huang, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A low noise device includes an isolation feature in a substrate. The low noise device further includes a gate stack over a channel in the substrate. The gate stack includes a gate dielectric layer extending over a portion of the isolation feature, and a gate electrode over the gate dielectric layer. The low noise device further includes a charge trapping reducing structure adjacent to the isolation feature. The charge trapping reducing structure is configured to reduce a number of charge carriers adjacent an interface between the isolation feature and the channel.