The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Jan. 28, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shiang-Chin Lu, Hsinchu, TW;
Chien-Chih Wu, Taoyuan, TW;
Jer-Shien Yang, Hsinchu, TW;
Hung-Wen Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a semiconductor substrate, a dielectric layer, a buffer layer, at least one recess, and at least one conductor. The dielectric layer is present on the semiconductor substrate. The buffer layer is present between the semiconductor substrate and the dielectric layer. The recess extends into the semiconductor substrate through the dielectric layer and the buffer layer, in which the buffer layer has a removing rate with respect to an etching process for forming the recess. The removing rate of the buffer layer is between those of the semiconductor substrate and the dielectric layer. The conductor is present in the recess.