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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9941394 B1

PDFFull Text
Date of Patent:
Apr. 10, 2018

Filed:

Aug. 14, 2014

Tunnel field-effect transistor

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Teng-Chun Tsai, Hsinchu, TW;

Cheng-Tung Lin, Jhudong Township, TW;

Li-Ting Wang, Hsinchu, TW;

Chih-Tang Peng, Zhubei, TW;

De-Fang Chen, Hsinchu, TW;

Hung-Ta Lin, Hsinchu, TW;

Chien-Hsun Wang, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Jesse Y Miyoshi

Assistant Examiner:

Tuan A Hoang

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 21/265 (2006.01); H01L 29/51 (2006.01); B82Y 10/00 (2011.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7391 (2013.01); B82Y 10/00 (2013.01); H01L 21/265 (2013.01); H01L 21/823462 (2013.01); H01L 21/823468 (2013.01); H01L 21/823487 (2013.01); H01L 21/823493 (2013.01); H01L 27/088 (2013.01); H01L 29/068 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0657 (2013.01); H01L 29/0676 (2013.01); H01L 29/0847 (2013.01); H01L 29/1041 (2013.01); H01L 29/42376 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/665 (2013.01); H01L 29/66068 (2013.01); H01L 29/66356 (2013.01); H01L 29/66439 (2013.01); H01L 29/66469 (2013.01); H01L 29/66553 (2013.01); H01L 29/66666 (2013.01); H01L 29/66977 (2013.01); H01L 29/775 (2013.01); H01L 29/7827 (2013.01); H01L 29/105 (2013.01); H01L 29/1608 (2013.01);
Abstract

The tunnel field-effect transistor includes a drain layer, a source layer, a channel layer, a metal gate layer, and a high-k dielectric layer. The drain and source layers are of opposite conductive types. The channel layer is disposed between the drain layer and the source layer. At least one of the drain layer, the channel layer, and the source layer has a substantially constant doping concentration. The metal gate layer is disposed around the channel layer. The high-k dielectric layer is disposed between the metal gate layer and the channel layer.

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