The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Jun. 26, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Bo-Jiun Lin, Hsinchu County, TW;
Ching-Yu Chang, Hsin-Chu, TW;
Hai-Ching Chen, Hsinchu, TW;
Tien-I Bao, Taoyuan County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A method for semiconductor manufacturing includes receiving a device that includes a substrate and a first layer disposed over the substrate, wherein the first layer includes a trench. The method further includes applying a first material over the first layer and filling in the trench, wherein the first material contains a matrix and a porogen that is chemically bonded with the matrix. The method further includes curing the first material to form a porous material layer. The porous material layer has a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed over the first layer. The first and second portions contain substantially the same percentage of each of Si, O, and C. The first and second portions contain substantially the same level of porosity.