The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2018
Filed:
Jun. 29, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Chih-Wen Liu, Taoyuan, TW;
Che-Hao Tu, Hsin-Chu, TW;
Po-Chin Nien, Taipei, TW;
William Weilun Hong, Hsin-Chu, TW;
Ying-Tsung Chen, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); B24B 37/04 (2012.01); H01L 21/321 (2006.01); B24B 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02052 (2013.01); B24B 1/00 (2013.01); B24B 37/044 (2013.01); H01L 21/30625 (2013.01); H01L 21/3212 (2013.01); H01L 21/67046 (2013.01); H01L 21/67051 (2013.01); H01L 21/67092 (2013.01); H01L 21/6838 (2013.01);
Abstract
A method is presented that includes the step of polishing a wafer positioned on a platen. After polishing the wafer, the method includes initiating a high pressure rinse on the wafer while the wafer is positioned on the platen, wherein the high pressure rinse includes a hydrophilic solution. The wafer is soaked in the hydrophilic solution, and after soaking the wafer, the wafer is cleaned.