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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9939729 B1

PDFFull Text
Date of Patent:
Apr. 10, 2018

Filed:

Sep. 08, 2016

Resist pattern-forming method

Applicant:

Jsr Corporation, Tokyo, JP;

Inventors:

Hisashi Nakagawa, Tokyo, JP;

Takehiko Naruoka, Tokyo, JP;

Tomoki Nagai, Tokyo, JP;

Assignee:

JSR CORPORATION, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Christopher G Young

Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/40 (2006.01); G03F 7/038 (2006.01); G03F 7/004 (2006.01); G03F 7/11 (2006.01); C08F 220/28 (2006.01); C08F 220/38 (2006.01); C08F 220/18 (2006.01); G03F 7/16 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
G03F 7/203 (2013.01); C08F 220/18 (2013.01); C08F 220/28 (2013.01); C08F 220/38 (2013.01); G03F 7/0045 (2013.01); G03F 7/0382 (2013.01); G03F 7/11 (2013.01); G03F 7/162 (2013.01); G03F 7/2004 (2013.01); G03F 7/2037 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01); C08F 2220/283 (2013.01); C08F 2220/382 (2013.01);
Abstract

A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).

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