The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Sep. 09, 2016
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Shay Reboh, Grenoble, FR;
Laurent Grenouillet, Claix, FR;
Frederic Milesi, Sassenage, FR;
Yves Morand, Grenoble, FR;
Francois Rieutord, Saint Egreve, FR;
Abstract
Method for creation of stressed channel structure transistors wherein at least one amorphizing ion implantation of the surface layer of a substrate of the semiconductor-on-insulator type is carried out through openings in a mask, so as to render zones of the surface layers amorphous and to induce relaxation of a zone intended to form a channel and located between the zones that have been rendered amorphous, the relaxation being carried out in a direction orthogonal to that in which it is intended that the channel current flows.