The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Oct. 07, 2016
Infineon Technologies Ag, Neubiberg, DE;
Thomas Aichinger, Villach, AT;
Wolfgang Bergner, Klagenfurt, AT;
Romain Esteve, Villach, AT;
Daniel Kueck, Villach, AT;
Dethard Peters, Hoechstadt, DE;
Victorina Poenariu, Villach, AT;
Gerald Reinwald, Wernberg, AT;
Roland Rupp, Lauf, DE;
Gerald Unegg, Villach, AT;
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Abstract
A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.