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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9934970 B1

PDFFull Text
Date of Patent:
Apr. 03, 2018

Filed:

Jan. 11, 2017

Self aligned pattern formation post spacer etchback in tight pitch configurations

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Sean D. Burns, Hopewell Junction, NY (US);

Lawrence A. Clevenger, Rhinebeck, NY (US);

Matthew E. Colburn, Schenectady, NY (US);

Nelson M. Felix, Briarcliff Manor, NY (US);

Sivananda K. Kanakasabapathy, Niskayuna, NY (US);

Christopher J. Penny, Saratoga Springs, NY (US);

Roger A. Quon, Rhinebeck, NY (US);

Nicole A. Saulnier, Albany, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Vazken Alexanian

Primary Examiner:

Vu A Vu

Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 21/31 (2006.01); H01L 21/027 (2006.01); H01L 45/00 (2006.01); H01L 21/28 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01); H01L 23/528 (2013.01); H01L 21/0274 (2013.01); H01L 21/28123 (2013.01); H01L 21/31 (2013.01); H01L 21/76897 (2013.01); H01L 45/1675 (2013.01); H01L 51/0018 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/11622 (2013.01);
Abstract

A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.

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