The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2018

Filed:

Sep. 27, 2016
Applicant:

Hitachi High-technologies Corporation, Tokyo, JP;

Inventors:

Yohei Kawaguchi, Tokyo, JP;

Tatehito Usui, Tokyo, JP;

Masahito Togami, Tokyo, JP;

Satomi Inoue, Tokyo, JP;

Shigeru Nakamoto, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 11/06 (2006.01); H01L 21/3065 (2006.01); H01L 21/66 (2006.01); G01N 21/84 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32972 (2013.01); G01B 11/0616 (2013.01); G01N 21/84 (2013.01); H01J 37/32935 (2013.01); H01J 37/32963 (2013.01); H01L 21/3065 (2013.01); H01L 22/26 (2013.01); H01J 37/32715 (2013.01); H01J 37/32834 (2013.01); H01J 2237/334 (2013.01);
Abstract

A plasma processing device performing etching processing to a sample disposed in a processing chamber disposed in a vacuum vessel by using plasma formed in the processing chamber includes a light detector, a component detector, and a determination unit. The light detector detects light intensity of a plurality of wavelengths from the inside of the processing chamber at a plurality of times during the sample processing. The component detector detects, by using a result of a principal component analysis of time-series data, a highly correlated component between the time-series data of a plurality of the wavelengths at a certain time in a plurality of the times obtained from output of the light detector. The determination unit determines an amount or an end point of the etching processing based on a change in light intensity of at least one of a plurality of the wavelengths detected by using the time-series data from which the highly correlated component is removed.


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