The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Jul. 16, 2014
Marubun Corporation, Tokyo, JP;
Toshiba Kikai Kabushiki Kaisha, Tokyo, JP;
Riken, Saitama, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Ulvac, Inc., Kanagawa, JP;
Tokyo Ohka Kogyo Co., Ltd., Kanagawa, JP;
Yukio Kashima, Tokyo, JP;
Eriko Matsuura, Tokyo, JP;
Mitsunori Kokubo, Shizuoka, JP;
Takaharu Tashiro, Shizuoka, JP;
Takafumi Ookawa, Shizuoka, JP;
Hideki Hirayama, Saitama, JP;
Sung Won Youn, Ibaraki, JP;
Hideki Takagi, Ibaraki, JP;
Ryuichiro Kamimura, Shizuoka, JP;
Yamato Osada, Shizuoka, JP;
Satoshi Shimatani, Kanagawa, JP;
MARUBUN CORPORATION, Tokyo, JP;
TOSHIBA KIKAI KABUSHIKI KAISHA, Tokyo, JP;
RIKEN, Saitama, JP;
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY, Tokyo, JP;
ULVAC, INC., Kanagawa, JP;
TOKYO OHKA KOGYO CO., LTD., Kanagawa, JP;
Abstract
A semiconductor light emitting element with a design wavelength of λ, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength λ satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength λ becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.