The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Dec. 27, 2016
Applied Materials, Inc., Santa Clara, CA (US);
Abhishek Dube, Fremont, CA (US);
Hua Chung, San Jose, CA (US);
Jenn-Yue Wang, Fremont, CA (US);
Xuebin Li, Sunnyvale, CA (US);
Yi-Chiau Huang, Fremont, CA (US);
Schubert S. Chu, San Francisco, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Implementations of the present disclosure generally relate to methods for epitaxial growth of a silicon material on an epitaxial film. In one implementation, the method includes forming an epitaxial film over a semiconductor fin, wherein the epitaxial film includes a top surface having a first facet and a second facet, and forming an epitaxial layer on at least the top surface of the epitaxial film by alternatingly exposing the top surface to a first precursor gas comprising one or more silanes and a second precursor gas comprising one or more chlorinated silanes at a temperature of about 375° C. to about 450° C. and a chamber pressure of about 5 Torr to about 20 Torr.