The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Jun. 23, 2011
Hoon Kim, San Jose, CA (US);
Wei Ti Lee, San Jose, CA (US);
Sang Ho Yu, Cupertino, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Hyoung-chan Ha, San Jose, CA (US);
Sang Hyeob Lee, Fremont, CA (US);
Hoon Kim, San Jose, CA (US);
Wei Ti Lee, San Jose, CA (US);
Sang Ho Yu, Cupertino, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Hyoung-Chan Ha, San Jose, CA (US);
Sang Hyeob Lee, Fremont, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and bottom surface of the opening; and depositing a conductive material on the layer to fill the opening. In some embodiments, one of ruthenium (Ru) or cobalt (Co) is deposited on the sidewall and bottom surface of the opening. The materials may be deposited by chemical vapor deposition (CVD) or by physical vapor deposition (PVD).