The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
May. 22, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yung-Hsu Wu, Taipei, TW;
Hai-Ching Chen, Hsinchu, TW;
Jung-Hsun Tsai, Taoyuan, TW;
Shau-Lin Shue, Hsinchu, TW;
Tien-I Bao, Dayuan Township, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A first conductive element is disposed in a first dielectric layer. An etching stop layer is disposed on the first dielectric layer but not on the first conductive element. A first metal capping layer segment is disposed on the first conductive element but not on the first dielectric layer. The etching stop layer has a greater thickness than the first metal capping layer segment. A first segment of a second conductive element is disposed on the first metal capping layer segment. A second segment of the second conductive element is disposed over the first segment of the second conductive element and partially over the etching stop layer. A third conductive element is disposed over the second conductive element.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile