The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Jan. 16, 2015
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/683 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31138 (2013.01); H01L 21/02118 (2013.01); H01L 21/31144 (2013.01); H01L 21/6831 (2013.01);
Abstract
This method for processing a target object includes steps STto ST. The target object has an organic polymer layer and a resist mask on a substrate. In step ST, the target object is electrostatically attached to an electrostatic chuck in a plasma processing apparatus. In step ST, the organic polymer layer is etched through the resist mask by means of a plasma of a first gas. In step ST, the target object is detached from the electrostatic chuck while a plasma of a second gas is generated. In step, the resist mask is peeled off. The second gas is either oxygen gas or a mixture of oxygen gas and a rare gas having an atomic weight lower than that of argon gas.