The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2018

Filed:

Sep. 26, 2014
Applicant:

Air Products and Chemicals, Inc., Allentown, PA (US);

Inventors:

Haripin Chandra, San Marcos, CA (US);

Anupama Mallikarjunan, San Marcos, CA (US);

Xinjian Lei, Vista, CA (US);

Moo-Sung Kim, Gyunggi-Do, KR;

Kirk Scott Cuthill, Vista, CA (US);

Mark Leonard O'Neill, Gilbert, AZ (US);

Assignee:

VERSUM MATERIALS US, LLC, Tempe, AZ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); H01L 21/02 (2006.01); C07F 7/10 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01); C23C 14/02 (2006.01); C23C 14/54 (2006.01); C23C 28/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C07F 7/10 (2013.01); C23C 14/027 (2013.01); C23C 14/548 (2013.01); C23C 16/18 (2013.01); C23C 16/345 (2013.01); C23C 16/45523 (2013.01); C23C 16/45542 (2013.01); C23C 16/45553 (2013.01); C23C 28/42 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01); H01L 21/02222 (2013.01); H01L 21/02274 (2013.01);
Abstract

Methods for forming silicon nitride films are disclosed that comprise the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiHgroup described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm.


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