The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2018

Filed:

Jan. 08, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Wei-De Ho, Hsinchu, TW;

Ching-Yu Chang, Yilang County, TW;

Kuei-Liang Lu, Hsinchu, TW;

Ming-Feng Shieh, Tainan County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/38 (2012.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 21/308 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/38 (2013.01); G03F 7/70466 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01);
Abstract

Disclosed is a mask for use in a lithography system having a defined resolution. The mask comprises first and second patterns that are greater than the defined resolution and a sub-resolution feature that is less than the defined resolution. Portions of the first and second patterns are positioned close to each other and separated by the sub-resolution feature in an intersection area. The size and shape of the sub-resolution feature are such that when the mask is used in the lithography system, a resulting pattern includes the first and second patterns interconnected with each other through the interconnection area.


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