The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Dec. 18, 2012
Applicant:
Ulvac, Inc., Chigasaki-shi, Kanagawa, JP;
Inventors:
Takashi Yoshida, Tomisato, JP;
Masahiro Matsumoto, Tomisato, JP;
Noriaki Tani, Tomisato, JP;
Susumu Ikeda, Chigasaki, JP;
Masashi Kubo, Chigasaki, JP;
Assignee:
ULVAC, INC., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); C23C 14/08 (2006.01); C23C 14/10 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0036 (2013.01); C23C 14/0063 (2013.01); C23C 14/083 (2013.01); C23C 14/10 (2013.01); C23C 14/3464 (2013.01);
Abstract
A film formation method is one for forming an organic layer comprising a fluorine-containing resin on an inorganic layer () formed on a substrate and comprising an inorganic substance. In the method, for the formation of the inorganic layer, a reactive sputtering procedure using water vapor as a reactive gas is carried out to form the inorganic layer on the substrate. Subsequently, the organic layer is formed on the inorganic layer. A film formation device enables the implementation of the film formation method.