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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9899499 B1

PDFFull Text
Date of Patent:
Feb. 20, 2018

Filed:

Aug. 25, 2015

High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss

Applicant:

Sunedison Semiconductor Limited (Uen201334164h), Singapore, SG;

Inventors:

Qingmin Liu, Glen Carbon, IL (US);

Gang Wang, Grover, MO (US);

Assignee:

SunEdison Semiconductor Limited (UEN201334164H), Singapore, SG;

Attorney:

Armstrong Teasdale LLP

Primary Examiner:

Charles Garber

Assistant Examiner:

Abdulfattah Mustapha

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 21/324 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/792 (2006.01); H01L 21/762 (2006.01); H01L 21/763 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66833 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02428 (2013.01); H01L 21/02598 (2013.01); H01L 21/304 (2013.01); H01L 21/324 (2013.01); H01L 21/763 (2013.01); H01L 21/76254 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/4234 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/792 (2013.01);
Abstract

A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm; a semiconductor nitride layer in contact with the semiconductor handle substrate, the semiconductor nitride layer selected from the group consisting of aluminum nitride, boron nitride, indium nitride, gallium nitride, aluminum gallium nitride, aluminum gallium indium nitride, aluminum gallium indium boron nitride, and combinations thereof; a dielectric layer in contact with the semiconductor nitride layer; and a semiconductor device layer in contact with the dielectric layer.

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