The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Aug. 09, 2016
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Thomas J. Haigh, Claverack, NY (US);
Juntao Li, Cohoes, NY (US);
Eric G. Liniger, Sandy Hook, CT (US);
Sanjay C. Mehta, Niskayuna, NY (US);
Son V. Nguyen, Schenectady, NY (US);
Chanro Park, Clifton Park, NY (US);
Tenko Yamashita, Schenectady, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Semiconductor devices having air gap spacers that are formed as part of BEOL or MOL layers of the semiconductor devices are provided, as well as methods for fabricating such air gap spacers. For example, a method comprises forming a first metallic structure and a second metallic structure on a substrate, wherein the first and second metallic structures are disposed adjacent to each other with insulating material disposed between the first and second metallic structures. The insulating material is etched to form a space between the first and second metallic structures. A layer of dielectric material is deposited over the first and second metallic structures using a pinch-off deposition process to form an air gap in the space between the first and second metallic structures, wherein a portion of the air gap extends above an upper surface of at least one of the first metallic structure and the second metallic structure.