The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
May. 02, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yu-Lien Huang, Jhubei, TW;
Chun-Hsiang Fan, Hsin-Chu, TW;
Tsu-Hsiu Perng, Zhubei, TW;
Chi-Kang Liu, Taipei, TW;
Yung-Ta Li, Kaohsiung, TW;
Ming-Huan Tsai, Zhubei, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Chi-Wen Liu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A FinFET and methods for forming a FinFET are disclosed. A method includes forming trenches in a semiconductor substrate to form a fin, depositing an insulating material within the trenches, and removing a portion of the insulating material to expose sidewalls of the fin. The method also includes recessing a portion of the exposed sidewalls of the fin to form multiple recessed surfaces on the exposed sidewalls of the fin, wherein adjacent recessed surfaces of the multiple recessed surfaces are separated by a lattice shift. The method also includes depositing a gate dielectric on the recessed portion of the sidewalls of the fin and depositing a gate electrode on the gate dielectric.