The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
May. 03, 2017
Globalfoundries Inc., Grand Cayman, KY;
Yi Qi, Niskayuna, NY (US);
Hsien-Ching Lo, Clifton Park, NY (US);
Jianwei Peng, Latham, NY (US);
Yanping Shen, Saratoga Springs, NY (US);
Hui Zhan, Clifton Park, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One illustrative method disclosed includes, among other things, forming a fin spacer adjacent a lower portion of a fin that is comprised of a fin spacer material, forming a conformal layer of a second spacer material on the exposed sidewalls and the upper surface of the fin, on the fin spacer and adjacent a gate structure of the FinFET device, wherein the second spacer material is a different material than the fin spacer material, performing an etching process to remove the second conformal layer from above the fin spacer to thereby re-expose the sidewalls of the fin above the fin spacer and the upper surface of the fin while forming a gate spacer comprising the second spacer material adjacent the gate structure, and forming an epi semiconductor material on the exposed sidewalls and upper surface of the fins above the first fin spacer.