The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Dec. 15, 2016
Tokyo Electron Limited, Tokyo, JP;
Junya Miyahara, Yamanashi, JP;
Yutaka Fujino, Yamanashi, JP;
Genji Nakamura, Yamanashi, JP;
Kentaro Shiraga, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for manufacturing an insulating film laminated structure includes a step of forming a first high-k film on a semiconductor substrate, a step of processing the semiconductor substrate in a processing chamber of a plasma processing apparatus by using a plasma to form an oxide film on an interface between the semiconductor substrate and the first high-k film, and a step of forming a second high-k film on the first high-k film. A plasma oxidation process is performed by using a plasma of an oxygen-containing gas at a processing temperature of the semiconductor substrate in a range from 20° C. to 145° C. while setting a power density of a total power of microwaves to be within a range from 0.035 kW/mto 3.5 kW/mwith respect to a total area of a conductive member facing an inner space of the processing chamber and microwave transmitting windows.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile