The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2018

Filed:

Nov. 30, 2015
Applicants:

Niko Semiconductor Co., Ltd., New Taipei, TW;

Super Group Semiconductor Co., Ltd., New Taipei, TW;

Inventors:

Chih-Cheng Hsieh, Taoyuan, TW;

Hsiu-Wen Hsu, Hsinchu County, TW;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 24/97 (2013.01); H01L 21/6835 (2013.01); H01L 21/76898 (2013.01); H01L 21/78 (2013.01); H01L 24/05 (2013.01); H01L 24/94 (2013.01); H01L 29/66666 (2013.01); H01L 23/495 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83862 (2013.01); H01L 2224/92242 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01);
Abstract

A manufacturing method of ultra-thin semiconductor device package structure is provided. Firstly, a wafer including a plurality of semiconductor devices is provided, and one of the semiconductor devices has an active surface having an active region and an outer region and a back surface. A first electrode and a second electrode are arranged in the active region, and the outer region has a cutting portion and a channel portion. Subsequently, a trench is formed in the channel portion, and filled with a conductive structure. The wafer is fixed on a supporting board, and then a thinning process and a deposition process of a back electrode layer are performed on the back surface in sequence. Thereafter, the supporting board is removed and a plurality of contacting pads is formed. A cutting process is performed along the cutting portion.


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