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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9881788 B1

PDFFull Text
Date of Patent:
Jan. 30, 2018

Filed:

May. 22, 2014

Back side deposition apparatus and applications

Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Yunsang Kim, Monte Sereno, CA (US);

Kaushik Chattopadhyay, San Jose, CA (US);

Gregory Sexton, Fremont, CA (US);

Youn Gi Hong, Pleasanton, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:

Weaver Austin Villeneuve & Sampson LLP

Primary Examiner:

Gordon R Baldwin

Assistant Examiner:

Charlee Bennett

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01J 37/00 (2006.01); H01L 21/02 (2006.01); H01L 27/115 (2017.01); C23C 16/52 (2006.01); H01L 21/67 (2006.01); C23C 16/458 (2006.01); C23C 16/02 (2006.01); C23C 16/44 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); C23C 16/02 (2013.01); C23C 16/44 (2013.01); C23C 16/458 (2013.01); C23C 16/52 (2013.01); H01J 37/32082 (2013.01); H01J 37/32403 (2013.01); H01J 37/32715 (2013.01); H01L 21/02301 (2013.01); H01L 21/02315 (2013.01); H01L 21/02345 (2013.01); H01L 21/67069 (2013.01); H01L 21/67207 (2013.01); H01L 27/115 (2013.01);
Abstract

The embodiments disclosed herein pertain to methods and apparatus for depositing stress compensating layers and sacrificial layers on either the front side or back side of a substrate. In various implementations, back side deposition occurs while the wafer is in a normal front side up orientation. The front/back side deposition may be performed to reduce stress introduced through deposition on the front side of the wafer. The back side deposition may also be performed to minimize back side particle-related problems that occur during post-deposition processing such as photolithography.

Published as:
CN105088177A; US2015340225A1; KR20150139774A; TW201608053A; US9881788B2; CN105088177B; TWI656234B; KR102379334B1; KR20220041810A; KR20220106093A; KR102548630B1; KR20230162912A;

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