The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Sep. 24, 2014
Qualcomm Incorporated, San Diego, CA (US);
Xia Li, San Diego, CA (US);
Jeffrey Junhao Xu, San Diego, CA (US);
Xiao Lu, San Diego, CA (US);
Bin Yang, San Diego, CA (US);
Jun Yuan, San Diego, CA (US);
Xiaonan Chen, San Diego, CA (US);
Zhongze Wang, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
An apparatus includes a metal gate, a substrate material, and an oxide layer between the metal gate and the substrate material. The oxide layer includes a hafnium oxide layer contacting the metal gate and a silicon dioxide layer contacting the substrate material and contacting the hafnium oxide layer. The metal gate, the substrate material, and the oxide layer are included in a one-time programmable (OTP) memory device. The OTP memory device includes a transistor. A non-volatile state of the OTP memory device is based on a threshold voltage shift of the OTP memory device.