The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Dec. 09, 2015
Infineon Technologies Ag, Neubiberg, DE;
Roman Baburske, Otterfing, DE;
Matteo Dainese, Villach, AT;
Peter Lechner, Holzkirchen, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Johannes Georg Laven, Taufkirchen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a semiconductor mesa having source zones separated from each other along a longitudinal axis of the semiconductor mesa and at least one body zone forming first pn junctions with the source zones and a second pn junction with a drift zone. Electrode structures are on opposite sides of the semiconductor mesa, at least one of which includes a gate electrode configured to control a charge carrier flow through the at least one body zone. First portions of the at least one body zone are formed between the source zones and separation regions. In the separation regions, at least one of (i) a capacitive coupling between the gate electrode and the semiconductor mesa and (ii) a conductivity of majority charge carriers of the drift zone is lower than outside of the separation region.