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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9875972 B1

PDFFull Text
Date of Patent:
Jan. 23, 2018

Filed:

Jul. 14, 2016

Semiconductor device structure and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shou-Zen Chang, New Taipei, TW;

Chi-Ming Huang, Changhua, TW;

Kai-Chiang Wu, Hsinchu, TW;

Sen-Kuei Hsu, Kaohsiung, TW;

Hsin-Yu Pan, Taipei, TW;

Han-Ping Pu, Taichung, TW;

Albert Wan, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Theresa T Doan

Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 21/485 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 23/3114 (2013.01); H01L 23/5382 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2225/06537 (2013.01); H01L 2225/06555 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a first device. The semiconductor device structure includes a conductive element over the first device. The semiconductor device structure includes a first conductive shielding layer between the first device and the conductive element. The first conductive shielding layer has openings, and a maximum width of the opening is less than a wavelength of an energy generated by the first device.

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