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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9865708 B1

PDFFull Text
Date of Patent:
Jan. 09, 2018

Filed:

Aug. 10, 2016

Semiconductor strips with undercuts and methods for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Tai-Chun Huang, Hsin-Chu, TW;

Chih-Tang Peng, Zhubei, TW;

Chia-Wei Chang, Taichung, TW;

Ming-Hua Yu, Hsin-Chu, TW;

Hao-Ming Lien, Hsin-Chu, TW;

Chao-Cheng Chen, Hsin-Chu, TW;

Tze-Liang Lee, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Cheung Lee

Assistant Examiner:

Stephen C Smith

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 27/088 (2006.01); H01L 21/762 (2006.01); H01L 21/764 (2006.01); H01L 21/84 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 21/764 (2013.01); H01L 21/76289 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/785 (2013.01); H01L 29/42392 (2013.01); H01L 29/7856 (2013.01);
Abstract

An integrated circuit device includes a semiconductor substrate, and a semiconductor strip extending into the semiconductor substrate. A first and a second dielectric region are on opposite sides of, and in contact with, the semiconductor strip. Each of the first dielectric region and the second dielectric region includes a first portion level with the semiconductor strip, and a second portion lower than the semiconductor strip. The second portion further includes a portion overlapped by the semiconductor strip.

Find Patent Forward Citations

Huang, Tai-Chun. (2018). Semiconductor strips with undercuts and methods for forming the same (U.S. Patent No. 9865708). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9865708

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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