The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Jul. 26, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Ki-Il Kim, Suwon-si, KR;
Gi-Gwan Park, Seoul, KR;
Jung-Gun You, Ansan-si, KR;
Hyung-Dong Kim, Seongnam-si, KR;
Sug-Hyun Sung, Yongin-si, KR;
Myung-Yoon Um, Seoul, KR;
Abstract
A method of fabricating a semiconductor device includes forming a plurality of mask patterns comprising a real mask pattern and a dummy mask pattern on a substrate, removing the dummy mask pattern and etching the substrate using the real mask pattern as a mask to form a first trench, a second trench, and a fin-type pattern defined by the first trench and the second trench. The second trench contacting the fin-type pattern comprises a smooth pattern which is convex and positioned between a bottom surface and a side surface of the second trench, a first concave portion which is positioned between the side surface of the second trench and the smooth pattern, and a second concave portion which is positioned between the convex portion and the bottom surface of the second trench.