The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Apr. 20, 2016
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Robert Chebi, San Carlos, CA (US);
Frank Lin, Fremont, CA (US);
Jaroslaw W. Winniczek, Daly City, CA (US);
Wan-Lin Chen, Cupertino, CA (US);
Erin Moore, Newark, CA (US);
Lily Zheng, Fremont, CA (US);
Stephan Lassig, Danville, CA (US);
Jeff Bogart, Campbell, CA (US);
Camelia Rusu, Fremont, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32009 (2013.01); H01J 37/3244 (2013.01); H01J 37/32449 (2013.01); H01L 21/02057 (2013.01); H01L 21/30655 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01J 2237/334 (2013.01);
Abstract
A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.