The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Jun. 13, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Sheng-Chau Chen, Tainan, TW;
Cheng-Hsien Chou, Tainan, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Sheng-Chan Li, Tainan, TW;
Zhi-Yang Wang, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A complementary metal-oxide-semiconductor (CMOS) image sensor having a passivation layer is provided. The CMOS image sensor includes a sensing device substrate. Isolation structures are positioned within trenches of the sensing device substrate. The isolation structures are arranged along opposing sides of a plurality of image sensing devices. The CMOS image sensor also includes a passivation layer. The passivation layer includes passivation sidewalls arranged along the sidewalls of the isolation structures. A metallic grid overlies the passivation layer. The metallic grid includes a metal framework surrounding openings overlying the plurality of image sensing devices. The passivation layer further includes passivation section underlying the openings.