The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2018
Filed:
Feb. 06, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Fu-Ting Sung, Taoyuan, TW;
Chung-Chiang Min, Hsinchu County, TW;
Wei-Hang Huang, Kaohsiung, TW;
Shih-Chang Liu, Kaohsiung County, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Methods for forming semiconductor structures are provided. The method for forming the semiconductor structure includes forming a word line cell over a substrate and forming a dielectric layer over the word line cell. The method further includes forming a conductive layer over the dielectric layer and polishing the conductive layer until the dielectric layer is exposed. The method further includes forming an oxide layer on a top surface of the conductive layer and removing portions of the conductive layer not covered by the oxide layer to form a memory gate.